TSHA5203  IR EMITTER HIGH EFF. 875nm / 5mm

Infrared Emitting Diode, 875 nm, GaAlAs

The TSHA520. series are infrared, 875 nm emitting diodes in
GaAlAs technology, molded in a clear, untinted plastic
package.

FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: λp = 875 nm
• High reliability
• Angle of half intensity: ϕ = ± 12°
• Low forward voltage
• Suitable for high pulse current operation
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC